Kuldeep Takhar

Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs

Kuldeep Takhar, Bhanu B. Upadhyay, Yogendra Yadav et al. · Applied Surface Science · 2019 · 18 citations

Engineering, Materials Engineering, Materials Science +16

Surface stoichiometry modification and improved DC/RF characteristics by plasma treated and annealed AlGaN/GaN HEMTs

Bhanu B. Upadhyay, Kuldeep Takhar, Jaya Jha et al. · Solid-State Electronics · 2017 · 17 citations

Engineering, Materials Engineering, Materials Science +16

Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser

Debashree Banerjee, Kuldeep Takhar, Sandeep Sankaranarayanan et al. · Applied Physics Letters · 2015 · 15 citations

Engineering, Electrical Engineering, Materials Science +17

Improved Ohmic contact to GaN and AlGaN/GaN two‐dimensional electron gas using trap assisted tunneling by B implantation

Pankaj Upadhyay, Mudassar Meer, Kuldeep Takhar et al. · physica status solidi (b) · 2015 · 13 citations

Engineering, Electrical Engineering, Materials Science +17

Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

Kuldeep Takhar, Satyam Kumar, Mudassar Meer et al. · Solid-State Electronics · 2016 · 12 citations

Engineering, Electrical Engineering, Materials Science +16