Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts - Concepedia

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Source extension region scaling for AlGaN/GaN high electron mobility transistors using non-alloyed ohmic contacts

12

Citations

30

References

2016

Year

Kuldeep Takhar, Satyam Kumar, Mudassar Meer, Bhanu B. Upadhyay, Pankaj Upadhyay, Dolar Khachariya, Swaroop Ganguly, Dipankar Saha

Solid-State Electronics

Wide-bandgap SemiconductorElectrical EngineeringEngineeringNon-alloyed Ohmic ContactsApplied PhysicsAluminum Gallium NitrideGan Power DeviceSource Extension Region

References

	Year	Citations

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