Tianchun Ye

Cycle-to-Cycle Intrinsic RESET Statistics in ${\rm HfO}_{2}$-Based Unipolar RRAM Devices

Shibing Long, Xiaojuan Lian, Tianchun Ye et al. · IEEE Electron Device Letters · 2013 · 113 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +7

Influence of nanowires length on performance of crystalline silicon solar cell

Haofeng Li, Rui Jia, Chen Chen et al. · Applied Physics Letters · 2011 · 87 citations

Engineering, Materials Engineering, Materials Science +17

FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf_0.5Zr_0.5O₂

Zhaohao Zhang, Gaobo Xu, Qingzhu Zhang et al. · IEEE Electron Device Letters · 2019 · 80 citations

Engineering, Electrical Engineering, Materials Science +15

Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation

Xiaogen Yin, Yongkui Zhang, Huilong Zhu et al. · IEEE Electron Device Letters · 2019 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Femtosecond direct laser writing of gold nanostructures by ionic liquid assisted multiphoton photoreduction

Weier Lu, Yongliang Zhang, Mei‐Ling Zheng et al. · Optical Materials Express · 2013 · 74 citations · Full text

Engineering, Materials Engineering, Materials Science +17