M. I. Vexler

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry et al. · Nature Electronics · 2021 · 330 citations · Full text

Electrical Engineering, Performance Limits, Scaled Cmos Devices +9

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

Yu. Yu. Illarionov, A. G. Banshchikov, Dmitry K. Polyushkin et al. · Nature Electronics · 2019 · 310 citations

Semiconductor Technology, Electrical Engineering, Two-dimensional Field-effect Transistors +4

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

M. I. Vexler, Stanislav Tyaginov, A. F. Shulekin · Journal of Physics Condensed Matter · 2005 · 57 citations

Semiconductor Technology, Sio2 Film, Electrical Engineering +13

Reliability of scalable MoS₂ FETs with 2 nm crystalline CaF₂ insulators

Yu. Yu. Illarionov, A. G. Banshchikov, Dmitry K. Polyushkin et al. · 2D Materials · 2019 · 44 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +15

Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology

Alexander Makarov, Stanislav Tyaginov, B. Kaczer et al. · 2017 · 34 citations

Engineering, Device Topology, Physical Design (Electronics) +16