A. F. Shulekin

Determination of the hole effective mass in thin silicon dioxide film by means of an analysis of characteristics of a MOS tunnel emitter transistor

M. I. Vexler, Stanislav Tyaginov, A. F. Shulekin · Journal of Physics Condensed Matter · 2005 · 57 citations

Semiconductor Technology, Sio2 Film, Electrical Engineering +13

Silicon Auger transistor—New insight into the performance of a tunnel MIS emitter transistor

I. V. Grekhov, A. F. Shulekin, M. I. Vexler · Solid-State Electronics · 1995 · 26 citations

Electrical Engineering, Engineering, Electronic Engineering +5

Statistical analysis of tunnel currents in scaled MOS structures with a non-uniform oxide thickness distribution

Stanislav Tyaginov, M. I. Vexler, A. F. Shulekin et al. · Solid-State Electronics · 2005 · 17 citations

Electrical Engineering, Tunnel Currents, Engineering +11

Quantization effects in hole inversion layers of tunnel MOS emitter transistors on Si (100) and (111) substrates at<i>T</i>= 300 K

A. F. Shulekin, M. I. Vexler, Horst Zimmermann · Semiconductor Science and Technology · 1999 · 17 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Current model considering oxide thickness non-uniformity in a MOS tunnel structure

M. I. Vexler, A. F. Shulekin, Ch. Dieker et al. · Solid-State Electronics · 2001 · 15 citations

Device Modeling, Electrical Engineering, Current Model +13