Shaofeng Yu

Improvement of FinFET Electrical Characteristics by Hydrogen Annealing

G. Gebara, Jannat Ara Zaman, Michael L. Gostkowski et al. · IEEE Electron Device Letters · 2004 · 87 citations

Engineering, Electrical Engineering, Semiconductor Devices +15

Implementation of both high-hole and electron mobility in strained Si/strained Si<sub>1-y</sub>Ge<sub>y</sub> on relaxed Si<sub>1-x</sub>Ge<sub>x</sub> (x<y) virtual substrate

Jongwan Jung, Minjoo Larry Lee, Shaofeng Yu et al. · IEEE Electron Device Letters · 2003 · 62 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial strained germanium p-MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode

Andrew Ritenour, Shaofeng Yu, Minjoo Larry Lee et al. · 2004 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs

Qihang Yang, Guodong Qi, Weizhuo Gan et al. · IEEE Transactions on Electron Devices · 2021 · 53 citations

Engineering, Computer Engineering, Electrical Engineering +17

New insights into AC RTN in scaled high-к / metal-gate MOSFETs under digital circuit operations

Jibin Zou, Runsheng Wang, Nanbo Gong et al. · 2012 · 32 citations

Engineering, Computer Engineering, Electrical Engineering +17