K. Rottner

Surface roughening in ion implanted 4H-silicon carbide

M. A. Capano, Sei‐Hyung Ryu, James A. Cooper et al. · Journal of Electronic Materials · 1999 · 104 citations

Materials Science, Ion Implantation, Engineering +3

Phosphorus-related donors in 6<i>H</i>-SiC generated by ion implantation

T. Troffer, C. Peppermüller, Gerhard Pensl et al. · Journal of Applied Physics · 1996 · 78 citations

SiC power devices for high voltage applications

K. Rottner, M. Frischholz, T Myrtveit et al. · Materials Science and Engineering B · 1999 · 76 citations

Electrical Engineering, Engineering, Power Device +4

Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

Fanny Dahlquist, Carl‐Mikael Zetterling, Mikael Östling et al. · Materials science forum · 1998 · 50 citations

Junction Barrier Schottky, Electrical Engineering, Engineering +9

Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

Augustinas Galeckas, Jan Linnros, M. Frischholz et al. · Materials Science and Engineering B · 1999 · 28 citations

Semiconductor Technology, Electrical Engineering, Engineering +4