High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

B. Gaffey, L. J. Guido, X.W. Wang, +1

IEEE Transactions on Electron Devices

Electrical EngineeringGate Insulator StackEngineeringSemiconductor DeviceNanoelectronics +10

Kilovolt AlGaN/GaN HEMTs as Switching Devices

N.-Q. Zhang, Brendan Moran, Steven P. DenBaars, +3

physica status solidi (a)

Sic MosfetElectrical EngineeringElectronic DevicesEngineeringSic Devices +13

Special reliability features for Hf-based high-/spl kappa/ gate dielectrics

T.P. Ma, H. Bu, X.W. Wang, +5

IEEE Transactions on Device and Materials Reliability

Electrical EngineeringSemiconductor DeviceEngineeringTunneling MicroscopyPhysics +13

Screening of Oxide/GaAs Interfaces for MOSFET Applications

M. Passlack, Ravi Droopad, Zhen Yu, +5

IEEE Electron Device Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringSolid-state LightingEngineering +11

Bilayer electrified-membrane with pair-atom tin catalysts for near-complete conversion of low concentration nitrate to dinitrogen

Xuanhao Wu, X.W. Wang, Yunshuo Wu, +6

Nature Communications

High-temperature characteristics of high-quality SiC MIS capacitors with O/N/O gate dielectric

X.W. Wang, Z. Luo, Tso‐Ping Ma

IEEE Transactions on Electron Devices

Materials EngineeringOno Stack GateElectrical EngineeringSemiconductor DeviceEngineering +10

SONOS-Type Flash Memory Cell With Metal$/\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{SiN}/\hbox{Si}_{3}\hbox{N}_{4}/\hbox{Si}$ Structure for Low-Voltage High-Speed Program/Erase Operation

Sun Il Shim, Frank C. Yeh, X.W. Wang, +1

IEEE Electron Device Letters

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureSolid-state Chemistry +19

Tuning nitrate reduction reaction selectivity via selective adsorption in electrified membranes

Yingzheng Fan, Yu Yan, Obinna Nwokonkwo, +9

Nature Chemical Engineering

p-Type SiGe transistors with low gate leakage using SiN gate dielectric

Wu Lu, X.W. Wang, R. Hammond, +6

IEEE Electron Device Letters

Sige HeterostructuresElectrical EngineeringP-type Sige TransistorsEngineeringRf Semiconductor +12

Extending gate dielectric scaling limit by use of nitride or oxynitride

X.W. Wang, Ying Shi, T.P. Ma, +5

Electrical EngineeringEngineeringPhysicsNanoelectronicsBias Temperature Instability +9