X.W. Wang

High-quality oxide/nitride/oxide gate insulator for GaN MIS structures

B. Gaffey, L. J. Guido, X.W. Wang et al. · IEEE Transactions on Electron Devices · 2001 · 114 citations

Electrical Engineering, Gate Insulator Stack, Engineering +12

Kilovolt AlGaN/GaN HEMTs as Switching Devices

N.-Q. Zhang, Brendan Moran, Steven P. DenBaars et al. · physica status solidi (a) · 2001 · 69 citations

Sic Mosfet, Electrical Engineering, Electronic Devices +15

Special reliability features for Hf-based high-/spl kappa/ gate dielectrics

T.P. Ma, H. Bu, X.W. Wang et al. · IEEE Transactions on Device and Materials Reliability · 2005 · 52 citations

Electrical Engineering, Semiconductor Device, Engineering +15

Screening of Oxide/GaAs Interfaces for MOSFET Applications

M. Passlack, Ravi Droopad, Zhen Yu et al. · IEEE Electron Device Letters · 2008 · 27 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Bilayer electrified-membrane with pair-atom tin catalysts for near-complete conversion of low concentration nitrate to dinitrogen

Xuanhao Wu, X.W. Wang, Yunshuo Wu et al. · Nature Communications · 2025 · 26 citations · Full text