B. Gaffey is an author at Yale University specializing in optoelectronics, applied physics, and engineering.
Top concepts
EngineeringApplied PhysicsOptoelectronicsChemistryThin FilmsSemiconductorsNanoelectronicsMicroelectronicsQuantum MaterialsElectrical Insulation
Publications per year
1998–2001
2
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Electronic properties of arsenic-doped gallium nitride
L. J. Guido, P. Mitev, M. Gherasimova et al. · Applied Physics Letters · 1998 · 36 citations
Semiconductors, Arsine Precursors, Wide-bandgap Semiconductor +14
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