Roman Olac-vaw

A 14 nm SoC platform technology featuring 2<sup>nd</sup> generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um<sup>2</sup> SRAM cells, optimized for low power, high performance and high density SoC products

C.-H. Jan, F. Al-Amoody, H.-Y. Chang et al. · 2015 · 48 citations

Engineering, Computer Engineering, Electrical Engineering +16

Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms

C. Prasad, K. W. Park, Manisha Chahal et al. · 2016 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +17

Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates

Hyun-Chul Kang, Roman Olac-vaw, Hiromi Karasawa et al. · Japanese Journal of Applied Physics · 2010 · 22 citations

Engineering, Electrical Engineering, Materials Science +16

Ambipolar Behavior in Epitaxial Graphene-Based Field-Effect Transistors on Si Substrate

Roman Olac-vaw, Hyun-Chul Kang, Hiromi Karasawa et al. · Japanese Journal of Applied Physics · 2010 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Addressable photocharging of single quantum dots assisted with atomic force microscopy probe

Maxim Dokukin, Roman Olac-vaw, Nataliia Guz et al. · Applied Physics Letters · 2009 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +17