H.L. Hughes

Hole and electron trapping in ion implanted thermal oxides and SIMOX

B. J. Mrstik, H.L. Hughes, P. J. McMarr et al. · IEEE Transactions on Nuclear Science · 2000 · 70 citations

Engineering, Materials Engineering, Materials Science +14

Structural and Strain‐Related Effects during Growth of SiO2 Films on Silicon

B. J. Mrstik, A. G. Revesz, Mario G. Ancona et al. · Journal of The Electrochemical Society · 1987 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Annealing of total dose damage: redistribution of interface state density on [100], [110] and [111] orientation silicon

Robert E. Stahlbush, R.K. Lawrence, H.L. Hughes et al. · IEEE Transactions on Nuclear Science · 1988 · 44 citations

Engineering, Materials Engineering, Materials Science +17

Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements

M. Simons, H.L. Hughes · IEEE Transactions on Nuclear Science · 1972 · 42 citations

Engineering, Electrical Engineering, Materials Science +14

Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygen

Robert E. Stahlbush, H.L. Hughes, W. Krull · IEEE Transactions on Nuclear Science · 1993 · 40 citations

Engineering, Materials Engineering, Materials Science +17