Concepedia

M. Simons

MS

Statistics

Publications

16

Citations

369

H-Index

14

Active since

1968

Affiliations

RTI International(Current)

United States Naval Research Laboratory

Sandia National Laboratories

M. Simons is an author at RTI International specializing in semiconductor devices, engineering, and radiation effects.

Publications per year

1968–2009

16

Publications

16

Determining the Energy Distribution of Pulse-Radiation-Induced Charge in MOS Structures from Rapid Annealing Measurements

M. Simons, H.L. Hughes · IEEE Transactions on Nuclear Science · 1972 · 42 citations

Engineering, Electrical Engineering, Materials Science +14

Long-Term Radiation Transients in GaAs FETs

M. Simons, E. E. King · IEEE Transactions on Nuclear Science · 1979 · 30 citations

Engineering, Electrical Engineering, Microelectronics +15

Transient radiation study of GaAs metal semiconductor field effect transistors implanted in Cr-doped and undoped substrates

M. Simons, E. E. King, W.T. Anderson et al. · Journal of Applied Physics · 1981 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Short-Term Charge Annealing in Electron-Irradiated Silicon Dioxide

M. Simons, H.L. Hughes · IEEE Transactions on Nuclear Science · 1971 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETs

W.T. Anderson, M. Simons, E. E. King et al. · IEEE Transactions on Nuclear Science · 1982 · 28 citations

Engineering, Electrical Engineering, Radiation Shielding +16

1–5 of 16