G. Frankowsky

Optical gain in GaInN/GaN heterostructures

G. Frankowsky, Friedrich W. Steuber, V. Härle et al. · Applied Physics Letters · 1996 · 115 citations

Engineering, Materials Science, Physics +17

Selective area epitaxy of GaInAs using conventional and novel group III precursors

F. Scholz, D. Ottenwälder, M. Eckel et al. · Journal of Crystal Growth · 1994 · 24 citations

Engineering, Materials Engineering, Materials Science +13

A 390-mm/sup 2/, 16-bank, 1-Gb DDR SDRAM with hybrid bitline architecture

T. Kirihata, Georg Mueller, Bing Ji et al. · IEEE Journal of Solid-State Circuits · 1999 · 18 citations

Engineering, Computer Engineering, Electrical Engineering +15

A 113 mm/sup 2/ 600 Mb/s/pin 512 Mb DDR2 SDRAM with vertically-folded bitline architecture

T. Kirihata, Georg Mueller, M.A. Clinton et al. · 2002 · 10 citations

Engineering, Computer Engineering, Computer Science +15

Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structures

T. Tütken, G. Frankowsky, A. Hangleiter et al. · Superlattices and Microstructures · 1990 · 10 citations

Natural Sciences, Materials Science, Physics +14