L. Rolland

SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer

L. Rolland, M. C. Peignon, Christophe Cardinaud et al. · Microelectronic Engineering · 2000 · 33 citations

Materials Science, Sio2/si Selectivity, Engineering +7

Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC

F. Gianesello, A. Monroy, V. Vialla et al. · 2016 · 23 citations

Rf Fems, Electrical Engineering, Engineering +13

Langmuir probe measurements in an inductively coupled plasma: Electron energy distribution functions in polymerizing fluorocarbon gases used for selective etching of SiO2

Freddy Gaboriau, Marie-Claude Peignon, Gilles Cartry et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2002 · 21 citations

Optical Materials, Selective Etching, Engineering +24

Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas

Angeliki Tserepi, Christophe Cardinaud, L. Rolland et al. · Microelectronic Engineering · 1998 · 18 citations

Materials Science, Polysilicon Room-temperature, Engineering +7

Roughness and chemistry of silicon and polysilicon surfaces etched in high-density plasma: XPS, AFM and ellipsometry analysis

L. Rolland, C. Vallée, Marie-Claude Peignon et al. · Applied Surface Science · 2000 · 13 citations

Materials Science, Surface Characterization, High-density Plasma +9