Jean-Claude de Jaeger

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri et al. · IEEE Transactions on Electron Devices · 2013 · 122 citations

Engineering, Electrical Engineering, Electronic Materials +16

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

P. Altuntas, F. Lecourt, Adrien Cutivet et al. · IEEE Electron Device Letters · 2015 · 71 citations

Engineering, Electrical Engineering, Materials Science +17

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

F. Lecourt, Alain Agboton, N. Ketteniss et al. · IEEE Electron Device Letters · 2013 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Seghir Boucherit, A. Soltani et al. · Applied Physics Letters · 2012 · 30 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

Y. Cordier, Rémi Comyn, Éric Frayssinet et al. · physica status solidi (a) · 2017 · 28 citations · Full text

Engineering, Electrical Engineering, Materials Science +17