P. Wolny

Unusual step meandering due to Ehrlich-Schwoebel barrier in GaN epitaxy on the N-polar surface

Henryk Turski, Filip Krzyżewski, Anna Feduniewicz‐Żmuda et al. · Applied Surface Science · 2019 · 39 citations

Wide-bandgap Semiconductor, Engineering, Physics +9

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Henryk Turski, M. Siekacz, P. Wolny et al. · Applied Physics Express · 2015 · 38 citations

Optical Materials, Engineering, Laser Science +18

Stack of two III-nitride laser diodes interconnected by a tunnel junction

M. Siekacz, G. Muzioł, Mateusz Hajdel et al. · Optics Express · 2019 · 35 citations · Full text

Photonics, Electrical Engineering, Engineering +11

The surface boundary conditions in GaN/AlGaN/GaN transistor heterostructures

M. Gładysiewicz, R. Kudrawiec, J. Misiewicz et al. · Applied Physics Letters · 2011 · 34 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Contactless electroreflectance studies of Fermi level position on c-plane GaN surface grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

R. Kudrawiec, M. Gładysiewicz, J. Misiewicz et al. · Applied Physics Letters · 2012 · 34 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +12