G. Audoit

Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

Sylvain Barraud, V. Lapras, Marie-Pierre Samson et al. · 2016 · 108 citations · Full text

Engineering, Inner Spacer, Integrated Circuits +16

Chemical and structural properties of conducting nanofilaments in TiN/HfO₂-based resistive switching structures

P. Calka, E. Martínez, V. Delaye et al. · Nanotechnology · 2013 · 82 citations

3D analysis of advanced nano-devices using electron and atom probe tomography

Adeline Grenier, S. Duguay, Jean‐Paul Barnes et al. · Ultramicroscopy · 2013 · 55 citations

Materials Science, Engineering, Electron Microscopy +14

Strain induced photoluminescence from silicon and germanium nanowire arrays

G. Audoit, E. Ní Mhuircheartaigh, Stephen M. Lipson et al. · Journal of Materials Chemistry · 2005 · 54 citations

Materials Science, Optical Materials, Germanium Nanowire Arrays +15

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

Sylvain Barraud, B. Prévitali, V. Lapras et al. · 2018 · 46 citations

Device Modeling, Gaa Fets, Electrical Engineering +13