Applied Physics Letters · 2015 · 42 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAmorphous SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsAmorphous Oxide SemiconductorsAmorphous Silicon Thin-film TransistorsDepletion-mode TransistorsEnhancement-mode TransistorsHigh PerformanceInverter DesignOxide Thin-film TransistorsSemiconductor Oxide Thin Films
A high performance inverter consisting of amorphous zinc-tin-oxide (a-ZTO) thin film transistor (TFT) with enhancement mode and amorphous silicon-zinc-tin-oxide (a-SZTO) TFT with depletion mode has been fabricated by using only n-type metal-oxide thin film transistors. The turn on voltages of ZTO and SZTO TFTs showed positive value of 1.17 V and negative value of −5 V, respectively. High voltage gain of about 25 has been obtained by using implemented inverter with good switching characteristics even with all n-type thin film transistors.
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P‐type doping and devices based on ZnO
D. C. Look, B. Claflin · physica status solidi (b) · 2004 · 525 citations
High mobility indium free amorphous oxide thin film transistors
Elvira Fortunato, L. Pereira, Pedro Barquinha et al. · Applied Physics Letters · 2008 · 223 citations