Compensation Models in Chlorine Doped CdTe Based on Positron Annihilation and Photoluminescence Spectroscopy

Abstract

In this investigatioii positron annihilation, photoluminescence and electroii paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explained by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electroii paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy.