High-Voltage E-Mode p-GaN Gate HEMT on Sapphire With Gate Termination Extension

Abstract

An enhancement-mode (E-mode) p-type gallium nitride (p-GaN) gate high electron mobility transistor with a gate termination extension (GTE-HEMT) has been developed on a sapphire substrate, intended for power switching applications of kilovoltage (kV) level. The GTE-HEMT device exhibits a low ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$19.3~\Omega \cdot $ </tex-math></inline-formula> mm, corresponding to a specific <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON},\text {SP}}$ </tex-math></inline-formula> ) of 7.33 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula> cm2. Notably, the GTE-HEMT has achieved a breakthrough by increasing the breakdown voltage (BV) to 2573 V, surpassing the conventional p-GaN gate HEMT (Conv-HEMT) with its BV of 1679 V. The enhanced BV is ascribed to the gate termination extension (GTE) that reduces the gate-edge electric field peak, similar to a junction termination extension (JTE) in traditional Si power devices. In addition, the dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> of the GTE-HEMT has been improved, with a normalized dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> (dynamic <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> /static <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R} _{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> ) of 1.4 and 2.6 for 650- and 1200-V OFF-state stress, respectively. The GTE-HEMT has been benchmarked to the state-of-the-art GaN power transistors, demonstrating its potential for high-voltage applications.