Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

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Engineering, Materials Engineering, Materials Science +17

Ultrahigh-Responsivity, Rapid-Recovery, Solar-Blind Photodetector Based on Highly Nonstoichiometric Amorphous Gallium Oxide

L. X. Qian, Zehan Wu, Yi‐Yu Zhang et al. · ACS Photonics · 2017 · 408 citations

Engineering, Materials Engineering, Materials Science +17

Recent progress in the growth of β-Ga2O3 for power electronics applications

M. Baldini, Zbigniew Galazka, G. Wagner · Materials Science in Semiconductor Processing · 2017 · 270 citations

Engineering, Materials Engineering, Materials Science +14

Growth and characterization of <i>α</i>-, <i>β</i>-, and <i>ϵ</i>-phases of Ga₂O₃ using MOCVD and HVPE techniques

Yao Yao, Serdal Okur, Luke A. M. Lyle et al. · Materials Research Letters · 2018 · 244 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Homoepitaxial growth of β‐Ga₂O₃ layers by metal‐organic vapor phase epitaxy

Guenter Wagner, M. Baldini, D. Gogova et al. · physica status solidi (a) · 2013 · 208 citations

Natural Sciences, Materials Engineering, Materials Science +17