Design of Resistive Load Inverter and Common Source Amplifier Circuits Using Symmetric and Asymmetric Nanowire FETs

Nanowire transistors without junctions

Jean-Pierre Colinge, Chi‐Woo Lee, Aryan Afzalian et al. · Nature Nanotechnology · 2010 · 2.4K citations

Engineering, Electrical Engineering, Materials Science +12

Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET

N. Loubet, Terence B. Hook, P. Montanini et al. · 2017 · 988 citations

Engineering, Electrical Engineering, Microelectronics +15

Performance estimation of junctionless multigate transistors

Chi‐Woo Lee, Isabelle Ferain, Aryan Afzalian et al. · Solid-State Electronics · 2009 · 556 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +13

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 532 citations

Engineering, Computer Engineering, Electrical Engineering +16

The future of computing beyond Moore’s Law

John Shalf · Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences · 2020 · 501 citations · Full text

Engineering, Computer Science, Information Technology +13