Electronics Letters · 2023 · 11 citations · 12 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesQuantum DotsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor LasersSemiconductor NanomaterialsCurrent DensityIndium PhosphideInorganic Phosphorus CompoundsLow-threshold Current LasersQuantum Dot LasersQuantum Dot MaterialsSemiconductor Laser FabricationSingle-crystal Growth
Abstract This study investigates the development of InAs quantum dot (QD) lasers on a InP(001) substrate, utilizing only III‐arsenide layers. This approach avoids the issues associated with the use of phosphorus compounds, which are evident in the crystal growth of conventional C/L‐band QD lasers, making the manufacturing process safer, simpler, and more cost‐effective. The threshold current density of the fabricated QD laser was 633 A/cm 2 , which is the lowest value for QD lasers in the 1.6‐µm wavelength region. This result suggests a high cost‐effectiveness and paves the way towards a large‐scale production technology for high‐performing C/L/U‐band QD lasers.
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Single-photon non-linear optics with a quantum dot in a waveguide
Alisa Javadi, Immo Söllner, M. Arcari et al. · Nature Communications · 2015 · 284 citations · Full text
High-gain and low-threshold InAs quantum-dot lasers on InP
Philippe Caroff, Cyril Paranthoën, Charly Platz et al. · Applied Physics Letters · 2005 · 131 citations