Two-dimensional vertical p-n diodes with sub-2-nm channel lengths

Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

Yuan Liu, Jian Guo, Enbo Zhu et al. · Nature · 2018 · 2.1K citations

Engineering, Materials Science, Physics +12

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Thanasis Georgiou, R. Jalil, Branson D. Belle et al. · Nature Nanotechnology · 2012 · 1.7K citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Band offsets and heterostructures of two-dimensional semiconductors

Jun Kang, Sefaattin Tongay, Jian Zhou et al. · Applied Physics Letters · 2013 · 1.7K citations

Natural Sciences, Materials Science, Physics +17

MoS₂transistors with 1-nanometer gate lengths

Sujay B. Desai, Surabhi R. Madhvapathy, Angada B. Sachid et al. · Science · 2016 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das, Amritanand Sebastian, Eric Pop et al. · Nature Electronics · 2021 · 953 citations

Engineering, Electrical Engineering, Materials Science +12