Evidence for ferroelastic switching and nanoscopic domains in polycrystalline Si-doped hafnium oxide films

Abstract

The mechanism of nanoscopic domain switching in ferroelectric hafnium oxide and its implications for antiferroelectric-like behavior as well as for the wake-up effect is still widely discussed. Understanding this mechanism is of vital importance for a multitude of applications like piezoelectric actuators, pyroelectric sensors, and nonvolatile memory devices. In this article, electrical and physical analysis methods are used to characterize ferroelectric hafnium oxide on the nanoscopic as well as the macroscopic length scale. Evidence for nanoscopic domains is found using transmission Kikuchi diffraction. In combination with macroscopic Preisach density measurements, strong evidence is found that antiferroelectric-like behavior and wake-up are governed by ferroelastic switching, i.e., a 90° domain wall motion. Based on these insights, the material stack can be optimized to further improve microelectronic applications based on HfO2.