Thomas Kämpfe

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

Tarek Ali, P. Polakowski, S. Riedel et al. · IEEE Transactions on Electron Devices · 2018 · 287 citations

Engineering, Electrical Engineering, Materials Science +13

FeFET: A versatile CMOS compatible device with game-changing potential

Sven Beyer, Stefan Dünkel, Martin Trentzsch et al. · 2020 · 145 citations

Engineering, Computer Engineering, Electrical Engineering +15

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Tarek Ali, P. Polakowski, S. Riedel et al. · Applied Physics Letters · 2018 · 142 citations

Engineering, Materials Engineering, Materials Science +17

Enhancing the Domain Wall Conductivity in Lithium Niobate Single Crystals

Christian Godau, Thomas Kämpfe, A. Thiessen et al. · ACS Nano · 2017 · 137 citations

Natural Sciences, Materials Science, Physics +15

A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage

Tarek Ali, P. Polakowski, Kati Kühnel et al. · 2019 · 136 citations

Engineering, Electrical Engineering, Materials Science +17