Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices

Review of Silicon Carbide Power Devices and Their Applications

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Optimum semiconductors for high-power electronics

K. Shenai, R.S. Scott, B. Jayant Baliga · IEEE Transactions on Electron Devices · 1989 · 611 citations

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Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

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Surface defects in 4H-SiC homoepitaxial layers

Lixia Zhao · Nanotechnology and Precision Engineering · 2020 · 55 citations · Full text

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