High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications

Abstract

We present Everspin’s new spin-transfer torque (STT) MRAM product, with magnetic tunnel junction arrays optimized for low-latency industrial applications, including higher speed, lower error rate, and longer cycling endurance. Performance metrics demonstrated include high-speed functionality with symmetric read and write throughput of an unprecedented 400MB/s over the full operating temperature range from -40°C to +85°C, with sufficient data retention and cycling endurance for industrial applications.