Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device

Abstract

Herein, the memory device with a structure of Ag/Ga2O3/Pt has been successfully achieved, and the coexistence of bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors are observed. The results show that the set process of bipolar and unipolar modes can be performed only when a positive voltage is applied with the same compliance current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {cc}}$ </tex-math></inline-formula> ) of 1 mA. For the reset process, the conversion process between bipolar and unipolar modes occurs by changing the polarity of sweeping voltages without <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {cc}}$ </tex-math></inline-formula> . The conduction mechanisms in two modes are conducting filaments (CFs) for the low resistance state (LRS). But for the high resistance states (HRS), it is schottky emission in BRS and space charge limited conduction mechanism in URS, respectively.