Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination

Abstract

HfO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ferroelectric FETs (FeFETs) offer excellent retention, scalability, and memory window. However, achieving high endurance is still challenging. Here, a fluorination treatment is presented that enables significant endurance and device stability improvement. Noise and charge pumping methods are applied to obtain deeper understanding of the underlying defect interaction in FeFETs.