Konstantin Mertens

A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays

David Lehninger, Martin Ellinger, Tarek Ali et al. · Advanced Electronic Materials · 2021 · 56 citations · Full text

Electrical Engineering, Electronic Devices, Engineering +15

Influence of Annealing Temperature on the Structural and Electrical Properties of Si-Doped Ferroelectric Hafnium Oxide

Maximilian Lederer, Pratik Bagul, David Lehninger et al. · ACS Applied Electronic Materials · 2021 · 45 citations

Magnetic Properties, Engineering, Thin Film Process Technology +17

Impact of the SiO2 interface layer on the crystallographic texture of ferroelectric hafnium oxide

Maximilian Lederer, André Reck, Konstantin Mertens et al. · Applied Physics Letters · 2021 · 39 citations · Full text

Engineering, Ferroelectric Application, Nanoelectronics +17

Optimizing Ferroelectric and Interface Layers in HZO-Based FTJs for Neuromorphic Applications

Ayse Sünbül, Tarek Ali, Konstantin Mertens et al. · IEEE Transactions on Electron Devices · 2021 · 38 citations

Non-volatile Memory, Engineering, Ftj Memory +24

Integration of Hafnium Oxide on Epitaxial SiGe for p-type Ferroelectric FET Application

Maximilian Lederer, Franz Müller, Kati Kühnel et al. · IEEE Electron Device Letters · 2020 · 29 citations

Materials Engineering, Materials Science, Electrical Engineering +15