Dual-ion-beam sputter deposition of ZnO films

Abstract

Physical properties of zinc oxide films deposited by dual-ion-beam sputtering are analyzed to point out the performance of this technique for the deposition of this material. The films are deposited by sputtering a zinc oxide target with an argon-ion beam, while a second low-energy beam, the assistance ion beam, impinges directly on the growing films. Results are presented for ZnO films deposited at room temperature with different oxygen/argon ratios in assistance ion beam and different sputtering ion-beam currents. Elemental, structural, and electrical analyses have been performed on films. All the films show the typical crystallographic orientation, with the c axis perpendicular to the substrate. The oxygen percentage in the assistance ion beam plays an important role in controlling the electrical resistivity of the films.