Applied Physics Letters · 2008 · 31 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor MaterialsOxide SemiconductorsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand AlignmentBand OffsetsConduction BandHeterojunctionsHeterostructuresSemiconductor CharacterizationValence BandValence Band Structure
The valence band offset (VBO) of the wurtzite ZnO∕4H-SiC heterojunction is directly determined to be 1.61±0.23eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50±0.23eV from the known VBO value, which indicates a type-II band alignment for this heterojunction. The experimental VBO value is confirmed and in good agreement with the calculated value based on the transitive property of heterojunctions between ZnO, SiC, and GaN.
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