Diffusion-Induced Defects in Silicon. I

Abstract

Dislocations introduced into the surface layers of silicon crystals by boron and phosphorus diffusion treatments of the type used in device manufacture were studied by transmission electron microscopy. Edge dislocation arrays were found for {110} and {111} surface orientations as was the case for previous observations on {100} specimens. The maximum density of dislocations was located at a depth corresponding to the steepest solute concentration gradient. The observations suggest that the glide mechanism for motion of edge dislocations into a crystal, previously proposed for diffusion into a {100} surface, does not operate for a {111} surface orientation. Most of the edge dislocations making up the accommodation network for the latter orientation apparently had moved into the crystal nonconservatively.