1982 · 19 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringMemoryMicroelectronicsSemiconductor DevicesDevice ReliabilityMemory DevicesMemory HierarchyMemory ManagementMemory Subsystem DesignDynamic Random-access MemoryDynamic Random-access Memory DesignMemory Array ArchitectureMemory Cell DesignMemory Circuit DesignRandom Access Memory (Ram)Random-access Memory
THIS PAPER will report on the design of a 256K DRAM utilizing laser repairable redundancy1 and 2.3pm design rules which permit use of either scanning projection or direct step on wafer lithography. Chip area is 54.3mm2 and the cell array was organized to obtain a length to width ratio of 2.5:l so that a standard 0.3″ wide 16pin DIP could be used.
1
A fault-tolerant 64K dynamic RAM
R.P. Cenker, D.G. Clemons, W.R. Huber et al. · 1979 · 66 citations
Engineering, Computer Engineering, Electrical Engineering +16