TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface

Abstract

The behavior of Si(100) surface defects induced by intentional Ni contamination was studied by means of etch-pit observation and transmission electron microscopy. After annealing at 1150°C for 1 hour in N 2 atmosphere, shallow pits (SP) were observed only on the surface of the wafer. These SP were thought to be attributable to NiSi 2 -type silicides formed on the surface by the selected area diffraction pattern. During the additionl thermal oxidation, oxidation-induced stacking faults (OSF) were always formed at each of the large SP but not always at small ones.