2002 · 20 citations · 3 references
Non-volatile MemoryElectrical EngineeringMb NandEngineeringV 32Incremental StepTypical 2.3Small Cell SizeFlash MemoryComputer EngineeringComputer ArchitectureComputer SciencePortable Mass StorageSemiconductor MemoryParallel ComputingMicroelectronicsMemory Architecture
Due to their small cell size, low power consumption, and fast page based read/program operations, NAND type flash memories are well suited for portable mass storage. This 3.3 V only 32 Mb NAND flash memory achieves typical 2.3 MB/s program performance with an incremental step pulse programming (ISPP) scheme. In addition, self-boosting of program inhibit voltages lowers the page programming current to 4.3 mA and a 24 MB/s read throughput is achieved with interleaved data paths. The device is fabricated in a 0.5 /spl mu/m CMOS process on a 94.9 mm/sup 2/ die.
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An experimental 4 Mb CMOS EEPROM with a NAND structured cell
Y. Itoh, M. Momodomi, R. Shirota et al. · 2003 · 40 citations
A quick intelligent program architecture for 3 V-only NAND-EEPROMs
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