Applied Physics Letters · 1979 · 30 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSilicon MaterialsBarrier HeightsSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersSchottky Contacts
The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Ir, IrSi, IrSi1.75, and IrSi3 have been determined by means of photoresponse, capacitance, and forward I/V measurements. In all cases the barrier height values are quite high, in excess of 0.85 eV. For Ir, IrSi, and IrSi1.75 the values obtained agree with values previously derived from forward I/V curves.
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Attenuation Length Measurements of Hot Electrons in Metal Films
C.R. Crowell, W. G. Spitzer, L. E. Howarth et al. · Physical Review · 1962 · 249 citations
Schottky-barrier height of iridium silicide
Iwao Ohdomari, K. N. Tu, F. M. d’Heurle et al. · Applied Physics Letters · 1978 · 39 citations