Enhanced multi-threshold (MTCMOS) circuits using variable well bias

S.V. Kosonocky, M. Irnmediato, P. Cottrell, T. Hook, R. Mann, J. Brown

2002 · 32 citations · 3 references

Concepts

Abstract

Advanced CMOS technology can enable high levels of performance with reduced active power at the expense of increased standby leakage, MTCMOS has previously been described as a method of reducing leakage in standby modes, by addition of a power supply interrupt switch. Enhancements using variable well bias and layout techniques are described and demonstrate increased performance and reduced leakage over conventional MTCMOS circuits.

References

3