Mtcmos Circuits
MTCMOS Circuits is a circuit design methodology that integrates multiple threshold voltage devices within a single integrated circuit to selectively power down inactive subcircuits through the use of high-threshold sleep transistors, thereby reducing subthreshold leakage current during standby modes.
123
Publications
6.4K
Citations
275
Authors
82
Institutions
Publications per year
2017–2026
13
Variants
Multi-threshold Cmos CircuitsMulti-threshold Complementary Metal-oxide-semiconductor Circuits
Parents
123
1–5 of 123
275
12
h-index
9
h-index
Massachusetts Institute of Technology, United States
9 publications · 1.3K citations
9
h-index
8
h-index
8
h-index
1–5 of 275
82
NTT (Japan)
Tokyo, Japan
10 h-index
45 publications
8.6K citations

Hong Kong University of Science and Technology
Hong Kong, Hong Kong
10 h-index
16 publications
423 citations
Massachusetts Institute of Technology
Cambridge, United States
9 h-index
24 publications
3.3K citations
University of Southern California
Los Angeles, United States
8 h-index
16 publications
338 citations

University of Waterloo
Waterloo, Canada
8 h-index
21 publications
1.6K citations
California Southern University
Chandler, United States
5 h-index
10 publications
242 citations
Fujitsu (United States)
Sunnyvale, United States
5 h-index
5 publications
107 citations
NTT Basic Research Laboratories
Atsugi, Japan
5 h-index
17 publications
2.1K citations
1–8 of 82
10 publications · 2.2K citations
10
h-index
7 publications · 314 citations
7
h-index
3 publications · 172 citations
3
h-index
3 publications · 80 citations
3
h-index
Conference · 3 publications · 80 citations
3
h-index
1–5