Publication | Closed Access
Enhanced write performance of a 64Mb phase-change random access memory
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2005
Year
Unknown Venue
Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringComputer EngineeringComputer ArchitectureCell Current RegulationComputer ScienceSemiconductor MemoryParallel ComputingMicroelectronicsEnhanced Write PerformancePhase-change MemoryMemory ArchitectureV 64Mb Phase-change RamPhase Change Memory
A 1.8 V 64 Mb phase-change RAM with improved write performance is fabricated in a 0.12 /spl mu/m CMOS technology. The improvement of RESET and SET distributions is based on cell current regulation and multiple step-down pulse generators. The read access time and SET-write time are 68 ns and 180 ns respectively.
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