Hyun-Geun Byun

A 0.1-$\mu{\hbox {m}}$ 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho et al. · IEEE Journal of Solid-State Circuits · 2007 · 136 citations

Engineering, Computer Engineering, Electrical Engineering +13

A 0.18 μm 3.0 V 64 Mb non-volatile phase-transition random-access memory (PRAM)

Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi et al. · 2004 · 57 citations

Engineering, Computer Engineering, Electrical Engineering +12

A 100nm Double-Stacked 500MHz 72Mb Separate-I/O Synchronous SRAM with Automatic Cell-Bias Scheme and Adaptive Block Redundancy

Kyomin Sohn, Young-Ho Suh, Young-Jae Son et al. · 2008 · 16 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 0.1/spl mu/m 1.8V 256Mb 66MHz Synchronous Burst PRAM

Sangbeom Kang, Wooyeong Cho, Beak-Hyung Cho et al. · 2006 · 15 citations

Engineering, Computer Engineering, Electrical Engineering +9

An autonomous SRAM with on-chip sensors in an 80nm double stacked cell technology

Kyomin Sohn, Namjun Cho, Hye Jung Kim et al. · 2005 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +17