Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition - Concepedia

Concepedia

Publication | Open Access

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

DOI Full Paper Access

11

Citations

23

References

2022

Year

Xiufei Hu, Yan Peng, Xiwei Wang, Xiaotong Han, Bin Li, Yiqiu Yang, Mingsheng Xu, Xiangang Xu, Jisheng Han, Dufu Wang,

Materials Today Communications

Materials ScienceDiamond-like CarbonEngineering4H-sic SubstrateNucleation Growth MechanismApplied PhysicsChemical Vapor DepositionCarbide

References

	Year	Citations

Page 1

Page 1