Dynamically replicated memory

Abstract

DRAM is facing severe scalability challenges in sub-45nm tech- nology nodes due to precise charge placement and sensing hur- dles in deep-submicron geometries. Resistive memories, such as phase-change memory (PCM), already scale well beyond DRAM and are a promising DRAM replacement. Unfortunately, PCM is write-limited, and current approaches to managing writes must de- commission pages of PCM when the first bit fails.