Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

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Calculation of critical layer thickness versus lattice mismatch for Ge<i>x</i>Si1−<i>x</i>/Si strained-layer heterostructures

R. People, J. C. Bean · Applied Physics Letters · 1985 · 1.7K citations

Engineering, Severe Plastic Deformation, Energy Balance +20

Lasing in direct-bandgap GeSn alloy grown on Si

Stephan Wirths, Richard Geiger, Nils von den Driesch et al. · Nature Photonics · 2015 · 1.2K citations

Materials Science, Materials Engineering, Engineering +3

Achieving direct band gap in germanium through integration of Sn alloying and external strain

Suyog Gupta, Blanka Magyari-Köpe, Yoshio Nishi et al. · Journal of Applied Physics · 2013 · 433 citations

Engineering, Direct Band Gap, Optoelectronic Devices +17

Strain relaxation kinetics in Si1−<i>x</i>Ge<i>x</i>/Si heterostructures

D. C. Houghton · Journal of Applied Physics · 1991 · 386 citations

Materials Science, Strain Relaxation Kinetics, Engineering +11