Haokun Ding

High gain, broadband p-WSe2/n-Ge van der Waals heterojunction phototransistor with a Schottky barrier collector

Shuo Li, Qiang Wu, Haokun Ding et al. · Nano Research · 2022 · 35 citations

Thickness-dependent behavior of strain relaxation and Sn segregation of GeSn epilayer during rapid thermal annealing

Hongjie Cai, Kun Qian, Yuying An et al. · Journal of Alloys and Compounds · 2022 · 19 citations

Materials Engineering, Materials Science, Material Analysis +10

Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection

Yiming Zhu, Tianwei Yang, Haokun Ding et al. · Applied Surface Science · 2024 · 16 citations

Photonics, Electrical Engineering, Photoluminescence +7

Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering

Guangyang Lin, Kun Qian, Haokun Ding et al. · Applied Surface Science · 2023 · 12 citations

Materials Engineering, Materials Science, Material Analysis +11

Scalable fabrication of self-assembled GeSn vertical nanowires for nanophotonic applications

Guangyang Lin, Yuying An, Haokun Ding et al. · Nanophotonics · 2023 · 11 citations · Full text