Air-Stable P-Doping in Record High-Performance Monolayer WSe₂ Devices

Abstract

We demonstrate that a pure nitric oxide treatment at elevated temperatures provides a stable p-doping for monolayer WSe2. This approach allows achieving record high hole current densities of ~300 μA/μm and low contact resistances of ~950 Ω∙μm, while preserving the transistor on/off current ratio >2×106. This scalable pathway significantly improves the performance of p-type WSe2 transistors, opening new opportunities for advancing 2D integration.