Formation of germanium nanocrystals and amorphous nanoclusters in GeSiOx films using electron beam annealing

Physics of Semiconductor Devices

Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

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Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors

F. Cerdeira, C.J. Buchenauer, Fred H. Pollak et al. · Physical review. B, Solid state · 1972 · 897 citations

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Infrared spectroscopic study of SiO<i>x</i> films produced by plasma enhanced chemical vapor deposition

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Quantitative analysis of the effect of disorder-induced mode coupling on infrared absorption in silica

Charles Kirk · Physical review. B, Condensed matter · 1988 · 668 citations

Natural Sciences, Materials Science, Physics +17

High-k/Ge MOSFETs for future nanoelectronics

Yoshiki Kamata · Materials Today · 2008 · 464 citations · Full text

Engineering, Materials Engineering, Materials Science +17