Stabilizing Remanent Polarization during Cycling in HZO‐Based Ferroelectric Device by Prolonging Wake‐up Period

Abstract

Abstract The stability of remanent polarization ( P r ) during multiple operations is critical for memory applications, as the degradation of P r leads to misreading of stored information. In this letter, improved stabilization of P r during field cycling in HfZrO 4 (HZO)‐based ferroelectric devices by inserting a ZrO 2 layer is reported. This optimization method is inspired by the fact that the wake‐up effect of HZO is not obvious. By inserting a ZrO 2 layer, which prolongs the wake‐up period, the fatigue process is postponed. Thus, a stabilized P r is achieved during cycling. The endurance limit can reach over 10 10 cycles with no significant decrease in P r (<5%), which is beneficial for improving the reliability of devices in practical applications.