Commercially Available N-polar GaN HEMT Epitaxy for RF Applications

Abstract

Transphorm Inc. is supplying N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. In this work, we report on the manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical performance. Results show good material quality, a low 2DEG sheet resistance with good non-uniformity, and good dynamic behavior with no current dispersion at 60 V at both room temperature and high temperature (150°C).